求翻译: Ion‐beam sensitivity of polymer resists 是什么意思?
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参考翻译3: No input file specified.
Verification of a proximity effect correction program in electron‐beam lithography的翻译是:一个邻近效应更正节目的证明在电子‐射线石版印刷方面[翻译]
A model for optimizing CPU time for proximity correction的翻译是:[翻译]
Twenty‐five nm features patterned with trilevel e‐beam resist的翻译是:[翻译]
Proximity effect correction in electron‐beam lithography的翻译是:邻近效应更正在电子‐射线石版印刷方面[翻译]
A multilayer, high resolution, ion‐bombardment‐tolerant electron resist system的翻译是:[翻译]
Practicing the Novolac deep‐UV portable conformable masking technique的翻译是:实践Novolac深刻的‐紫外便携式的一致的掩没的技术[翻译]
Silicon transfer layer for multilayer resist systems的翻译是:Silicon transfer layer for multilayer resist systems[翻译]
Deep‐UV photoresists: Poly(methyl methacrylate‐co‐indenone)的翻译是:深刻的‐紫外光致抗蚀剂:多(甲醇异丁烯酸‐ co ‐ indenone)[翻译]
An approach to correct the proximity effect in electron beam proximity printing的翻译是:An approach to correct the proximity effect in electron beam proximity printing[翻译]
Submicron electron‐beam patterning of aluminum by a double‐layer pattern transfer technique的翻译是:亚显微电子‐射线仿造由一个双重‐层数样式调动技术的铝[翻译]
Ion‐beam sensitivity of polymer resists的翻译是:[翻译]
Lift‐off of thick metal layers using multilayer resist的翻译是:举‐厚实的金属层使用多层抵抗[翻译]
Novel plasma developable resist compositions and performance of total dry microfabrications in submicron lithography的翻译是:[翻译]
The chemical reactivity and lithographic sensitivity of obliquely deposited germanium selenide films used as low energy ion beam resists的翻译是:[翻译]
Dosimetry for lithographic applications的翻译是:[翻译]
MBE‐grown fluoride films: A new class of epitaxial dielectrics的翻译是:MBE ‐增长的氟化物影片:外延电介质新的类[翻译]
Anodic oxide composition and Hg depletion at the oxide–semiconductor interface of Hg1-xCdxTe的翻译是:正极氧化物构成和Hg在Hg1-xCdxTe氧化物半导体接口的取尽[翻译]
Oxygen adsorption on the disordered silicon surface的翻译是:[翻译]
Optically enhanced oxidation of semiconductors的翻译是:Optically enhanced oxidation of semiconductors[翻译]
Correlation of GaAs surface chemistry and interface Fermi‐level position: A single defect model interpretation的翻译是:Correlation of GaAs surface chemistry and interface Fermi ‐ level position: A single defect model interpretation[翻译]

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