求翻译: Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability—A Model-Based Approach 是什么意思?
语音:
参考翻译3: No input file specified. 参考翻译4: 亚阈值比较的4T和6T的FinFET SRAM单元操作考虑变异的基于模型的方法 参考翻译5: 4T和6T SRAM单元的FinFET器件的亚阈值操作考虑variability-a基于模型的方法的比较
Low-Frequency Noise Investigation and Noise Variability Analysis in High- k /Metal Gate 32-nm CMOS Transistors的翻译是: /Metal Gate 32-nm CMOS Transistors">[翻译]
Compact Modeling of Variability Effects in Nanoscale nand Flash Memories的翻译是:[翻译]
A Three-Dimensional Physical Model for V_{\rm th} Variations Considering the Combined Effect of NBTI and RDF的翻译是:A Three-Dimensional Physical Model for <img src=" /images/tex/509.gif" alt= " V_ {\ rm th} "> Variations Considering the Combined Effect of NBTI and RDF Variations Considering the Combined Effect of NBTI and RDF对于<img src=“/图像/特/ 509一三维物理模型。gif”alt=“v_ {日}”>变化综合考虑NBTI和RDF的影响">[翻译]
Impact of Hot Carriers on nMOSFET Variability in 45- and 65-nm CMOS Technologies的翻译是:热的载体的冲击对在45的nMOSFET可变性-和65 nm CMOS技术[翻译]
Impact of Ge Content and Recess Depth on the Leakage Current in Strained \hbox {Si}_{1-x}\hbox {Ge}_{x}/\hbox {Si} Heterojunctions的翻译是:Impact of Ge Content and Recess Depth on the Leakage Current in Strained <img src=" /images/tex/19737.gif" alt=" \ hbox {Si}_{1-x} \ hbox {Ge}_{x}/\ hbox {Si} "> Heterojunctions HeterojunctionsGe含量和隐窝深度对紧张<img src=“/图像/特/ 19737的漏电流的影响。gif”alt=“ hbox {Si} _ { } { } hbox 1-X通用_ {X} / hbox {Si}”>异质结">[翻译]
Novel Capacitorless 1T-DRAM Cell for 22-nm Node Compatible With Bulk and SOI Substrates的翻译是:Novel Capacitorless 1T-DRAM Cell for 22-nm Node Compatible With Bulk and SOI Substrates[翻译]
Performance Assessment of Nanoscale Field-Effect Diodes的翻译是:[翻译]
Interdigit 4H-SiC Vertical Schottky Diode for Betavoltaic Applications的翻译是:Betavoltaic应用的Interdigit 4H Sic垂直的肖特基二极管[翻译]
Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage的翻译是:[翻译]
Reduction of Fixed-Position Noise in Position-Sensitive Single-Photon Avalanche Diodes的翻译是:Reduction of Fixed-Position Noise in Position-Sensitive Single-Photon Avalanche Diodes[翻译]
Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability—A Model-Based Approach的翻译是:[翻译]
Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated With a Full Replacement Gate Process的翻译是:在SOI MOSFETs的稀土元素Scandate/罐子门堆制造与充分的替换给过程装门[翻译]
A Novel Random Telegraph Signal Method to Study Program/Erase Charge Lateral Spread and Retention Loss in a SONOS Flash Memory的翻译是:A Novel Random Telegraph Signal Method to Study Program/Erase Charge Lateral Spread and Retention Loss in a SONOS Flash Memory[翻译]
Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization的翻译是:[翻译]
Simulation of “Ab Initio” Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo的翻译是:[翻译]
Impacts of Multiple-Gated Configuration on the Characteristics of Poly-Si Nanowire SONOS Devices的翻译是:多装门的配置的冲击对多Si Nanowire SONOS设备的特征[翻译]
Compact High-Precision Models for Silicon p-n Step Junction Avalanche-Breakdown Voltages的翻译是:[翻译]
Comprehensive Study on Negative Capacitance Effect Observed in MOS(n) Capacitors With Ultrathin Gate Oxides的翻译是:[翻译]
Fast V_{\rm TH} Transients After the Program/Erase of Flash Memory Stacks With High- k Dielectrics的翻译是:快速的<img src=” /images/tex/17299.gif” alt= " V_ {\ rm TH} “>瞬间,在闪存堆节目/删掉与高的<img src=” /images/tex/348.gif” alt= " k "的>电介质后 Transients After the Program/Erase of Flash Memory Stacks With High- k Dielectrics快速<img src=“/图像/特/ 17299。gif”alt=“v_ {日}”>瞬变在编程/擦除闪存堆叠高<img src=“/图像/特/ 348。gif”alt=“K”>介质">[翻译]

Google Adsmore>>

我要翻译网 | 知识搜索 | 最新翻译 | 关于我们 | 最新更新 | 知识 | DOC100 | 美女图片 | 工作机会

0 1 2 4 5 6 7 10 11 12 13 14 15 16 17 18 19

Copyright © 2005 - 2019 WoYaoFanYi.Com. All Rights Reserved.