求翻译: Reductions in interface defects, Dit, by post oxidation plasma-assisted nitridation of GaN–SiO2 interfaces in MOS devices 是什么意思?
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参考翻译1: 对接口的减少背叛, Dit,以邮寄氧化作用淦SiO2接口的由等离子协助的nitridation在MOS设备的 参考翻译2: 减少界面缺陷,Dit,邮寄氧化用途氮化的氮化镓二氧化硅界面在金属氧化物半导体设备 参考翻译3: 界面缺陷,Dit,邮政氧化等离子体辅助氮化的 MOS 器件中的 GaN–SiO2 接口的减少 参考翻译4: 减少界面缺陷,DIT后的氧化,等离子体辅助氮化GAN-SiO2界面在MOS设备 参考翻译5: 在界面上的缺陷,减少的DIT,氧化后的等离子体辅助氮化SiO2界面–GaN MOS器件
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