求翻译: The effects of Ge content in poly-Si1−xGex gate material on the tunneling barrier in PMOS devices 是什么意思?
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参考翻译1: The effects of Ge content in poly-Si1−xGex gate material on the tunneling barrier in PMOS devices 参考翻译2: 通用内容的影响在poly-Si1−xGex门材料在隧道屏障在PMOS设备 参考翻译3: The effects of Ge content in poly-Si1−xGex gate material on the tunneling barrier in PMOS devices 参考翻译4: SI1级运用虚拟聚在PMOS器件的隧穿势垒栅极材料中锗含量的影响 参考翻译5: 在poly-si1−运用虚拟栅极材料的Ge含量对隧穿势垒在PMOS器件的影响
Na+Na+ exchange mediated by (Na+ + K+)-ATPase reconstituted into liposomes. Evaluation of pump stoichiometry and response to ATP and ADP的翻译是:Na+  Na+ exchange mediated by (Na+ + K+) -ATPase reconstituted into liposomes. Evaluation of pump stoichiometry and response to ATP and ADP[翻译]
Editorial Board的翻译是:编辑委员会[翻译]
Preface的翻译是:<div class="definition" dir=""> <span class="BAB_CPPOSStyle">(动)</span> 为...加序言; 作为...的开端 <br style="clear : both; font-size : 1px;"> </div> <div class="DIV_AS_HR">&nbsp;</div> <div class="definition" dir=""> <span class="BAB_CPPOSStyle">(名)</span> 序文, 前言, 绪言 <br style="clear : both; font-size : 1px;"> </div>[翻译]
40 years MOS technology — from empiricism to science的翻译是:40 years MOS technology-from empiricism to science[翻译]
Outlook of MOS devices into next century的翻译是:MOS设备外型到下个世纪里[翻译]
The initial growth steps of ultrathin gate oxides的翻译是:The initial growth steps of ultrathin gate oxides[翻译]
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The role of native traps on the tunneling characteristics of ultra-thin (1.5–3 nm) oxides的翻译是:当地人陷井的角色在超薄的(1.5-3毫微米)氧化物的挖洞特征的[翻译]
Novel mechanisms in nm-thick gate SiO2 growth at low temperatures utilizing activated oxygen的翻译是:在nm厚实的门SiO2成长的新颖的机制在运用被激活的氧气的低温[翻译]
The effects of Ge content in poly-Si1−xGex gate material on the tunneling barrier in PMOS devices的翻译是:The effects of Ge content in poly-Si1−xGex gate material on the tunneling barrier in PMOS devices[翻译]
X-ray irradiation effect on the reliability of ultra-thin gate oxides and oxynitrides的翻译是:X射线辐射对超薄的门氧化物和氮氧化合物的可靠性的辐照区域作用[翻译]
Investigation of temperature acceleration of thin oxide time-to-breakdown的翻译是:稀薄的氧化物定期对故障的温度加速度的调查[翻译]
Reliability of ultra thin oxide and nitride films in the 1 nm to 2 nm range的翻译是:Reliability of ultra thin oxide and nitride films in the 1 nm to 2 nm range[翻译]
Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si的翻译是:Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si[翻译]
Reliability of ultra-thin gate oxides grown in low-pressure N2O ambient or on nitrogen-implanted silicon的翻译是:Reliability of ultra-thin gate oxides grown in low-pressure N2O ambient or on nitrogen-implanted silicon[翻译]
Photoelectron yield spectroscopy of electronic states at ultrathin SiO2Si interfaces的翻译是:Photoelectron yield spectroscopy of electronic states at ultrathin SiO2Si interfaces[翻译]
Ultrathin nitrided gate dielectrics by plasma-assisted processing的翻译是:Ultrathin nitrided gate dielectrics by plasma-assisted processing[翻译]
A study of atomically-flat SiO2Si interface formation mechanism, based on the radical oxidation kinetics的翻译是:原子平的SiO2Si接口形成机制的研究,根据根本氧化作用动能学[翻译]
Effect of local surface structure on electronic properties of hydrogenated silicon surfaces的翻译是:Effect of local surface structure on electronic properties of hydrogenated silicon surfaces[翻译]
Al/SiO2(2.0–2.5 nm)/p-Si tunnel junction as a light emitter的翻译是:Al/SiO2 (2.0-2.5 nm) /p-Si tunnel junction as a light emitter[翻译]

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